AO6422 20v n-channel mosfet product summary v ds = 20v i d = 5a (v gs = 4.5v) r ds(on) < 44m (v gs = 4.5v) r ds(on) < 55m (v gs = 2.5v) r ds(on) < 72m (v gs = 1.8v) general description the AO6422 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v. this device is suitable for general purpose application. g d s d d g d s d top view 1 2 3 6 5 4 tsop6 top view bottom view pin1 symbol 10 sec steady state v ds v gs 5 3.9 4.2 3 i dm 2.0 1.1 1.3 0.7 t j , t stg parameter symbol typ max t 10s 47.5 62.5 steady state 74 110 steady state r q jl 54 68 power dissipation a t a =25c vv i d gate-source voltage pulsed drain current b continuous drain current a drain-source voltage 20 absolute maximum ratings t a =25c unless otherwise noted junction and storage temperature range t a =70c units parameter t a =25c t a =70c maximum junction-to-lead c c/w thermal characteristics units maximum junction-to-ambient a c/w maximum junction-to-ambient a 8 c/w r q ja c -55 to 150 30 a p d w alpha & omega semiconductor, ltd. www.aosmd.com
AO6422 symbol min typ max units bv dss 20 v 1 t j = 55c 5 i gss 100 na v gs(th) 0.4 0.65 1 v i d(on) 30 a 35 44 t j =125c 48 60 43 55 m w 55 72 m w g fs 14 s v sd 0.8 1 v i s 2 a c iss 450 560 pf c oss 74 pf c rss 52 pf r g 4.9 7.5 w q g (4.5v) 6.2 8.2 nc q gs 0.4 nc q gd 1.3 nc t d(on) 4.5 ns drain-source breakdown voltage on state drain current i d = 250 m a, v gs = 0v v gs = 4.5v, v ds = 5v v gs = 4.5v, i d = 5.0a reverse transfer capacitance zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss m a gate threshold voltage v ds = v gs i d = 250 m a v ds = 20v, v gs = 0v v ds = 0v, v gs = 8v m w i s = 1a,v gs = 0v v ds = 5v, i d = 5.0a v gs = 2.5v, i d = 4.5a v gs = 1.8v, i d = 3.5a turn-on delaytime switching parameters total gate charge gate source charge gate drain charge v gs = 4.5v, v ds = 10v, i d = 5a dynamic parameters maximum body-diode continuous current gate resistance v gs =0v, v ds =0v, f=1mhz v gs =0v, v ds =10v, f=1mhz input capacitance output capacitance alpha & omega semiconductor, ltd. www.aosmd.com t d(on) 4.5 ns t r 6 ns t d(off) 33 ns t f 7.1 ns t rr 13 17 ns q rr 3.3 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time body diode reverse recovery charge i f =5a, di/dt=100a/ m s i f =5a, di/dt=100a/ m s turn-on rise time turn-off delaytime v gs =4.5v, v ds =10v, r l =2 w , r gen =3 w turn-off fall time turn-on delaytime a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a = 25 c. in any given application depends on the user's specifi c board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using t 300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the soa curve provides a single pulse rating. rev2: feb. 2012 alpha & omega semiconductor, ltd. www.aosmd.com
AO6422 typical electrical and thermal characteristics i f =-6.5a, di/dt=100a/ m s 0 5 10 15 20 25 30 0 1 2 3 4 5 i d (a) v ds (volts) figure 1: on-region characteristics 3v 4.5v 2v 0 2 4 6 8 10 0 0.4 0.8 1.2 1.6 2 i d (a) v gs (volts) figure 2: transfer characteristics 25 c 125 c v ds = 5v 30 38 46 54 62 70 0 3 6 9 12 15 r ds(on) (m w ww w ) v gs = 4.5v v gs = 2.5v v gs = 1.8v 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance v gs =1.5v v gs = 4.5v i d = 5a 2.5v alpha & omega semiconductor, ltd. www.aosmd.com i f =-6.5a, di/dt=100a/ m s functions and reliability without notice. 30 0 3 6 9 12 15 i d (a) figure 3: on-resistance vs. drain current and gate voltage 1e-06 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics 25 c 125 c 0.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature 20 40 60 80 100 120 1 2 3 4 5 6 7 8 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage i d = 5.0a 25 c 125 c alpha & omega semiconductor, ltd. www.aosmd.com
AO6422 typical electrical and thermal characteristics i f =-6.5a, di/dt=100a/ m s 0 1 2 3 4 5 0 1 2 3 4 5 6 7 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 0 5 10 15 20 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 1 10 100 1000 0.00001 0.001 0.1 10 1000 power (w) 0.01 0.1 1 10 100 0.1 1 10 100 i d (amps) 100 m s 10ms 1ms 100mss 10s dc r ds(on) limited t j(max) =150 c t a =25 c 10 m s v ds = 10v i d = 5a t j(max) =150 c t a =25 c alpha & omega semiconductor, ltd. www.aosmd.com i f =-6.5a, di/dt=100a/ m s 1 0.00001 0.001 0.1 10 1000 pulse width (s) figure 10: single pulse power rating junction- to-ambient (note e) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impe dance(note e) 0.01 0.1 1 10 100 v ds (volts) figure 9: maximum forward biased safe operating area (note e) t a =25 c single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =110 c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse alpha & omega semiconductor, ltd. www.aosmd.com
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